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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
KDR322
SILICON EPITAXIAL
SCHOTTKY BARRIER TYPE DIODE
FEATURES
Low Forward Voltage : VF=0.54V (Typ.).
A
E M B M
Low Reverse Current : IR=5 A (Max.). Small Package : USM.
2
D 3
DIM A
B C D E G H J K
1
MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10
0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN
J G
C
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VRM VR IFM IO PD Tj Tstg RATING 45 40 300 100 100 125 -55 125 UNIT V V mA mA mW
H N K N
L M N
3
1. N.C 2. ANODE 3. CATHODE
2 1
USM
Marking
UL
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
TEST CONDITION IF=1mA IF=10mA IF=100mA VR=40V VR=0, f=1MHz MIN. TYP. 0.28 0.36 0.54 18 MAX. 0.60 5 25 A pF V UNIT
SYMBOL VF (1)
Forward Voltage
VF (2) VF (3)
Reverse Current Total Capacitance
IR CT
2001. 12. 4
Revision No : 2
1/2
KDR322
I F - VF
300m 100m 30m 10m
Ta= 100
Ta= 25
C T - VR
100 TOTAL CAPACITANCE C T (pF) 50 30
FORWARD CURRENT I F (A)
3m 1m 0.3m 0.1m 0
C 25 C
10 5 3
C
Ta=-
0.2
0.4
0.6
0.8
1.0
1
0
4
8
12
16
20
24
28
32
36
FORWARD VOLTAGE V F (V)
REVERSE VOLTAGE V R (V)
IR - VR
100 m 30 m 10 m 3m 1m 300n 100n 30n 10n 3n 1n 0.3n 0.1n 0 10 20 30 40 50 REVERSE VOLTAGE V R (V)
Ta=0 C Ta=-25 C Ta=100 C Ta=75 C Ta=50 C Ta=25 C
2001. 12. 4
REVERSE CURRENT I R (A)
Revision No : 2
2/2

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